Solid-state imaging device

A solid-state imaging device, comprising:

• a first semiconductor layer including a photoelectric converter and an electric charge accumulation section for each pixel, the electric charge accumulation section in which a signal electric charge generated in the photoelectric converter is accumulated;
• a second semiconductor layer that is provided with a pixel transistor and is stacked on the first semiconductor layer, the pixel transistor that reads the signal electric charge of the electric charge accumulation section;
• an insulating region that divides the second semiconductor layer;
• and
• an element separation region provided in a portion in a thickness direction from a front surface of the second semiconductor layer.

A solid-state imaging device, comprising:

• a first substrate including a photoelectric converter and an electric charge accumulation section for each pixel, the electric charge accumulation section in which a signal electric charge generated in the photoelectric converter is accumulated;
• a second substrate that is provided with a pixel transistor and includes a second semiconductor layer and an insulating region, the pixel transistor that reads the signal electric charge of the electric charge accumulation section, the second semiconductor layer being stacked on the first substrate, and the insulating region that divides the second semiconductor layer;
• a through electrode that penetrates through the insulating region in a thickness direction to reach the first substrate;
• and
• a coupling section that is provided in the second substrate and disposed at a position opposed to the second semiconductor layer, and has a hole diameter different from a hole diameter of the through electrode.

A solid-state imaging device, comprising:

• a first substrate including a photoelectric converter and an electric charge accumulation section for each pixel, the electric charge accumulation section in which a signal electric charge generated in the photoelectric converter is accumulated;
• a second substrate that is provided with a pixel transistor and is stacked on the first substrate, the pixel transistor that reads the signal electric charge of the electric charge accumulation section;
• a bonding film that is provided at a bonding surface between the second substrate and the first substrate, and is provided in a selective region between the second substrate and the first substrate;
• and
• a through electrode that is disposed in a gap of the bonding film, and electrically couples the second substrate and the first substrate to each other.

A solid-state imaging device, comprising:

• a first semiconductor layer including a photoelectric converter and an electric charge accumulation section for each pixel, the electric charge accumulation section in which a signal electric charge generated in the photoelectric converter is accumulated;
• a transfer transistor that includes a gate electrode opposed to the first semiconductor layer, and transfers the signal electric charge of the photoelectric converter to the electric charge accumulation section;
• a second semiconductor layer that is provided with a pixel transistor and is stacked on the first semiconductor layer, the pixel transistor that reads the signal electric charge of the electric charge accumulation section;
• a third semiconductor layer including a third region electrically coupled to a potential of a first region of the first semiconductor layer or a second region of the second semiconductor layer;
• a protection element having a pn junction in the third semiconductor layer;
• and
• an antenna wiring line that is opposed to the first semiconductor layer with the second semiconductor layer interposed therebetween, and is electrically coupled to the protection element, and the pixel transistor or the transfer transistor.