Protection diode matrix for antenna protection

A semiconductor structure comprising:

• a first nanosheet layer, comprising a first channel region, and a heavily doped epitaxial region of a first type;
• a second nanosheet layer comprising:
• a second channel region;
• a heavily doped epitaxial region of a second type disposed above the first nanosheet layer;
• and
• a first gate surrounding the first channel region and the second channel region;
• a substrate, wherein the substrate is grounded;
• and
• a protection diode comprising a source, a drain, and a second gate, wherein the drain is connected to the first gate, and wherein the second gate is connected to the source, wherein the protection diode provides protection against plasma induced damage during a manufacturing process.

A semiconductor structure comprising:

• a first nanosheet layer, comprising a first channel region, and a heavily doped epitaxial region of a first type;
• a second nanosheet layer comprising:
• a second channel region;
• a heavily doped epitaxial region of a second type disposed above the first nanosheet layer;
• and
• a first gate surrounding the first channel region and the second channel region;
• a substrate, wherein the substrate is grounded;
• and
• a protection diode comprising a source, a drain, and a second gate, wherein the drain is connected to the first gate, and wherein the second gate is connected to the source, wherein the protection diode provides protection against plasma induced damage during a manufacturing process, wherein the manufacturing process comprises a process prior to removing the substrate of the semiconductor structure.