Electrostatic discharge protection device and method of making
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTzu-Hao CHIANG, Wun-Jie LIN, Jam-Wem LEE
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Abstract
A semiconductor device includes a substrate. The semiconductor device further includes a doped region in the substrate. The semiconductor device further includes an active area, and wherein the active area comprises an emitter region and a collector region, wherein the emitter region is electrically connected to the doped region. The semiconductor device further includes a deep trench isolation (DTI) structure extending through the active area and between the emitter region and the collector region.
Claims20
A semiconductor device, comprising:
- a substrate;
- a doped region in the substrate;
- an active area, and wherein the active area comprises an emitter region and a collector region, wherein the emitter region is electrically connected to the doped region;
- and
- a deep trench isolation (DTI) structure extending through the active area and between the emitter region and the collector region.
A method of making a semiconductor device, the method comprising:
- doping a substrate to define a doped region in the substrate;
- defining an active area in the substrate, wherein the active area comprises an emitter region and a collector region;
- etching a first opening in the substrate between the emitter region and the collector region;
- filling the first opening with a first isolation material;
- and
- electrically connecting the emitter region to the doped region.
A semiconductor device, comprising:
- a substrate;
- a doped region in the substrate;
- an active area, and wherein the active area comprises a plurality of emitter regions and a plurality of collector regions, wherein a first emitter region of the plurality of emitter regions is electrically connected to the doped region;
- and
- a plurality of deep trench isolation (DTI) structures extending through the active area, wherein each of the plurality of DTI structures is between a corresponding emitter region of the plurality of emitter regions and an adjacent collector region of the plurality of collector regions.
Dependencies are inferred from the claim text.