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US 2025/0098301 A1Published application
Gate-tie-down in backside power architecture using trench-tie-down scheme
AssigneeQUALCOMM Incorporated
InventorsDeepak SHARMA, Yan SUN, Shreesh NARASIMHA
Life of this patent
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Abstract
Disclosed are gate-tie-down (GTD) cells that utilize a backside power delivery scheme, where metal wires that deliver power are provided on the back of the wafer. As a result, ultra-low height standard cell can be enabled. Also higher area scaling may be achieved. Further, performance and power gain can be maximized.
Claims30
A gate-tie-down (GTD) cell, comprising:
- first and second edge gates extending in a first direction, the first and second edge gates defining boundaries of the GTD cell;
- a channel ribbon extending in a second direction different from the first direction from the first edge gate to the second edge gate, the channel ribbon being formed at least partially within the first and second edge gates;
- a backside power (BSP) rail extending in the second direction, the BSP rail being formed below the first and second edge gates and below the channel ribbon;
- and
- a BSP trench extending in the second direction, the BSP trench being formed on the BSP rail, the BSP trench being conductive and electrically coupled with the BSP rail and with the first and second edge gates,
- wherein a first edge portion of the channel ribbon within the first edge gate is configured to prevent a first channel being formed therein when a turn-off voltage is applied to the first edge gate,
- wherein a second edge portion of the channel ribbon within the second edge gate is configured to prevent a second channel being formed therein when the turn-off voltage is applied to the second edge gate, and
- wherein the BSP rail is configured to apply the turn-off voltage to the first and second edge gates through the BSP trench.
5 more elements
A method of fabricating a gate-tie-down (GTD) cell, the method comprising:
- forming first and second edge gates extending in a first direction, the first and second edge gates defining boundaries of the GTD cell;
- forming a channel ribbon extending in a second direction different from the first direction from the first edge gate to the second edge gate, the channel ribbon being formed at least partially within the first and second edge gates;
- forming a backside power (BSP) rail extending in the second direction, the BSP rail being formed below the first and second edge gates and below the channel ribbon;
- and
- forming a BSP trench extending in the second direction, the BSP trench being formed on the BSP rail, the BSP trench being conductive and electrically coupled with the BSP rail and with the first and second edge gates,
- wherein a first edge portion of the channel ribbon within the first edge gate is configured to prevent a first channel being formed therein when a turn-off voltage is applied to the first edge gate,
- wherein a second edge portion of the channel ribbon within the second edge gate is configured to prevent a second channel being formed therein when the turn-off voltage is applied to the second edge gate, and
- wherein the BSP rail is configured to apply the turn-off voltage to the first and second edge gates through the BSP trench.
5 more elements
Dependencies are inferred from the claim text.