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US 2025/0098282 A1Published application
Increase the volume of epitaxy regions
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorYu-Lien Huang
Life of this patent
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Abstract
A method includes forming a gate stack on a plurality of semiconductor fins. The plurality of semiconductor fins includes a plurality of inner fins, and a first outer fin and a second outer fin on opposite sides of the plurality of inner fins. Epitaxy regions are grown based on the plurality of semiconductor fins, and a first height of the epitaxy regions measured along an outer sidewall of the first outer fin is smaller than a second height of the epitaxy regions measured along an inner sidewall of the first outer fin.
Claims20
A method comprising:
- forming a semiconductor fin, wherein the semiconductor fin is higher than isolation regions;
- forming a fin spacer on a sidewall of the semiconductor fin, wherein the forming the fin spacer comprises:
- depositing a spacer layer on the semiconductor fin;
- and
- performing a first etching process on the spacer layer, wherein in the first etching process, a first polymer layer is generated on the spacer layer;
- and
- removing the first polymer layer.
4 more elements
A method comprising:
- forming dielectric isolation regions;
- forming a plurality of semiconductor fins protruding higher than the dielectric isolation regions, wherein the plurality of semiconductor fins comprise:
- a first outer fin and a second outer fin;
- and
- an inner fin between the first outer fin and the second outer fin;
- depositing a spacer layer on top surfaces and sidewalls of the plurality of semiconductor fins, wherein a top portion of the spacer layer overlaps one of the plurality of semiconductor fins, and a top surface of the top portion of the spacer layer is exposed;
- with the top surface of the top portion of the spacer layer being exposed, starting to perform a first etching process and to thin the spacer layer, wherein during the first etching process, a first polymer layer is generated to contact the top surface of the top portion of the spacer layer;
- after the spacer layer is thinned, removing the first polymer layer generated in the first etching process;
- and
- epitaxially growing epitaxy regions based on the plurality of semiconductor fins.
7 more elements
A method comprising:
- depositing a spacer layer on top surfaces and sidewalls of a plurality of protruding fins;
- and
- etching the spacer layer to form a plurality of fin spacers on sidewalls of the plurality of protruding fins, wherein the etching the spacer layer comprises performing a first cycle comprising:
- performing an etching process to etch the spacer layer, wherein a first polymer layer is generated at a same time the spacer layer is etched, and is generated as a by-product of the etching process;
- and
- after the etching process, removing the first polymer layer generated in the etching process.
3 more elements
Dependencies are inferred from the claim text.