Backside bi-directional interconnect

A method of manufacturing a semiconductor structure, comprising:

• forming a gate stack extending along a first direction in a front portion of the semiconductor structure, the gate stack including a first gate structure and a second gate structure, the second gate structure being offset from the first gate structure in the first direction, a first S/D structure being disposed adjacent the first gate structure, a second S/D structure being disposed adjacent the second gate structure, and the first S/D structure and the second S/D structure being offset from each other in a second direction;
• forming a first backside conductive structure in contact with the first S/D structure and disposed at least partially in a back portion of the semiconductor structure opposing the front portion;
• forming a second backside conductive structure in contact with the second S/D structure and disposed at least partially in the back portion of the semiconductor structure;
• and
• forming a third backside conductive structure disposed in the back portion of the semiconductor structure, the third backside conductive structure extending along the second direction and in contact with the first backside conductive structure and the second backside conductive structure.

An electronic device, comprising:

• an integrated circuit device including a semiconductor structure, and the semiconductor structure comprising:
• a gate stack extending along a first direction in a front portion of the semiconductor structure, the gate stack including a first gate structure and a second gate structure offset from each other in the first direction;
• a first source/drain (S/D) structure adjacent the first gate structure;
• a second S/D structure adjacent the second gate structure, the second S/D structure being offset from the first S/D structure in a second direction;
• a first backside conductive structure in contact with the first S/D structure and disposed at least partially in a back portion of the semiconductor structure opposing the front portion;
• a second backside conductive structure in contact with the second S/D structure and disposed at least partially in the back portion of the semiconductor structure;
• and
• a third backside conductive structure disposed in the back portion of the semiconductor structure, the third backside conductive structure extending along the second direction and in contact with the first backside conductive structure and the second backside conductive structure.