Group iii-n device including source contact connected to substrate through trench

Abstract

Semiconductor devices with a source contact extending into a substrate are described. In one example, a semiconductor device comprises a semiconductor substrate including a source region, a gate region, a drain region, and a drain access region, where a heterojunction structure is disposed over the semiconductor substrate. The heterojunction structure includes a buffer layer over the semiconductor substrate and a barrier layer over the buffer layer. A gate stack is disposed over the barrier layer in the gate region. A source contact in the source region extends into the semiconductor substrate, including a first contact with a 2DEG in the heterojunction structure and a second contact with the semiconductor substrate.

Dependencies are inferred from the claim text.