Semiconductor device

A semiconductor device, comprising:

• a first electrode;
• a first semiconductor layer located on the first electrode, the first semiconductor layer including a plurality of regions, the first semiconductor layer being connected to the first electrode, the first semiconductor layer being of a first conductivity type;
• a second semiconductor layer located on the first semiconductor layer, the second semiconductor layer being of a second conductivity type;
• a third semiconductor layer located on a portion of the second semiconductor layer, the third semiconductor layer being of the first conductivity type;
• a second electrode located in each of the plurality of regions, the second electrode facing the first semiconductor layer via an insulating body;
• a third electrode arranged along a boundary between adjacent regions of the plurality of regions, the third electrode not being located at a portion of the boundary most distant to the second electrode, the third electrode facing the second semiconductor layer via an insulating body;
• and
• a fourth electrode located on the third semiconductor layer, the fourth electrode being connected to the second semiconductor layer, the third semiconductor layer, and the second electrode, a portion of the fourth electrode located at the most distant portion having a Schottky barrier junction with the first semiconductor layer.