Self-aligned backside interconnect

A method of manufacturing a semiconductor structure, comprising:

• forming a first channel structure;
• forming a first source/drain (S/D) structure electrically coupled to the first channel structure;
• forming a first gate structure included in a gate stack extending along a first direction in a front portion of the semiconductor structure, the first channel structure disposed through the first gate structure and extending along a second direction from a first side of the first gate structure to a second side of the first gate structure, and the first S/D structure adjacent the first gate structure;
• forming a backside dielectric layer in a back portion of the semiconductor structure opposing the front portion;
• removing a sacrificial structure in the backside dielectric layer and removing a portion of an epitaxial stop layer under the first S/D structure to define an opening;
• and
• forming a backside conductive structure based on the opening, the backside conductive structure being in contact with the first S/D structure and disposed at least partially in the back portion of the semiconductor structure and through the backside dielectric layer,
• wherein the backside conductive structure extends along the first direction and has a length in the first direction greater than a width of the first channel structure in the first direction.

An electronic device, comprising:

• an integrated circuit device including a semiconductor structure, and the semiconductor structure comprising:
• a gate stack extending along a first direction in a front portion of the semiconductor structure, the gate stack including a first gate structure;
• a first channel structure disposed through the first gate structure and extending along a second direction from a first side of the first gate structure to a second side of the first gate structure;
• a first source/drain (S/D) structure adjacent the first gate structure and electrically coupled to the first channel structure;
• a backside dielectric layer disposed in a back portion of the semiconductor structure opposing the front portion;
• and
• a backside conductive structure in contact with the first S/D structure and disposed at least partially in the back portion of the semiconductor structure and through the backside dielectric layer,
• wherein the backside conductive structure extends along the first direction and has a length in the first direction greater than a width of the first channel structure in the first direction.