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US 2025/0098245 A1Published application
Source/drain regions for nanosheet devices
AssigneeInternational Business Machines Corporation
InventorsSagarika Mukesh, Alexander Reznicek, Tao Li, Ruilong Xie
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Abstract
A semiconductor device comprises a stacked structure, the stacked structure comprising a plurality of gate structures alternately stacked with a plurality of channel layers. At least one epitaxial source/drain region disposed on a side of the stacked structure, and the stacked structure is disposed on at least one dielectric layer. A portion of the at least one epitaxial source/drain region is disposed in the at least one dielectric layer.
Claims20
A semiconductor device comprising:
- a stacked structure comprising a plurality of gate structures alternately stacked with a plurality of channel layers;
- and
- at least one epitaxial source/drain region disposed on a side of the stacked structure;
- wherein the stacked structure is disposed on at least one dielectric layer;
- and
- wherein a portion of the at least one epitaxial source/drain region is disposed in the at least one dielectric layer.
3 more elements
A semiconductor device comprising:
- a first nanosheet structure comprising a first plurality of gate structures alternately stacked with a first plurality of channel layers;
- a second nanosheet structure comprising a second plurality of gate structures alternately stacked with a second plurality of channel layers;
- and
- at least one epitaxial source/drain region disposed between the first and second nanosheet structures;
- wherein the first and second nanosheet structures are disposed on at least one dielectric layer;
- and
- wherein a portion of the at least one epitaxial source/drain region is disposed in the at least one dielectric layer.
4 more elements
A method comprising:
- forming a stacked structure comprising a plurality of sacrificial semiconductor layers alternately stacked with a plurality of channel layers, wherein the stacked structure is formed on a semiconductor layer comprising a surface with a designated crystal orientation;
- and
- growing at least one epitaxial source/drain region on a side of the stacked structure from an exposed portion of the semiconductor layer in a bottom-up epitaxial growth process.
Dependencies are inferred from the claim text.