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AssigneeVanguard International Semiconductor Corporation
InventorsTing-Yu CHANG, Yeh-Ning JOU, Jian-Hsing LEE, Chieh-Yao CHUANG, Hsien-Feng LIAO
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An electrostatic discharge (ESD) protection device is provided. A deep-well region is formed on a substrate. A first well region, a second well region, a third well region, and a fourth well region are formed on the deep-well region. A fifth well region is formed in the fourth well region. A first doped region is formed in the first well region. A second doped region is formed in the second well region. A third doped region is formed in the fourth well region. A gate structure covers the third well region. Each of the substrate, the second well region, the fourth well region, the second doped region, and the third doped region has a first conductivity type. Each of the deep-well region, the first well region, the third well region, the fifth well region, and the first doped region has a second conductivity type.
An electrostatic discharge (ESD) protection device comprising:
A transistor structure comprising:
Dependencies are inferred from the claim text.