Air gap insulation in place of gate spacers

An integrated circuit (IC) structure, comprising:

• a transistor comprising a channel region and a region comprising a doped semiconductor material, wherein the region is either a source region or a drain region of the transistor;
• a gate structure coupled to the channel region, wherein the gate structure includes a gate electrode material and a first electrically conductive material;
• a contact structure coupled to the region, wherein the contact structure includes a second electrically conductive material;
• and
• a gap between the gate structure and the contact structure,
• wherein, in a cross-sectional side view, a portion of the gate structure that is farthest away from the channel region is a rounded portion.

A method of fabricating an integrated circuit (IC) structure, the method comprising:

• providing a transistor comprising a channel region and a region comprising a doped semiconductor material, wherein the region is either a source region or a drain region of the transistor;
• providing a gate structure coupled to the channel region, wherein the gate structure includes a gate electrode material and a first electrically conductive material;
• providing a contact structure coupled to the region, wherein the contact structure includes a second electrically conductive material;
• providing a gap between the gate structure and the contact structure;
• and
• providing a liner material on at least a portion of a sidewall of the gap, the liner material comprising aluminum and oxygen.