Dielectric and two-dimensional semiconductor material nanosheet devices

A semiconductor device comprising:

• a nanosheet structure comprising:
• a plurality of gate structures alternately stacked with a plurality of dielectric layers;
• and
• a plurality of two-dimensional semiconductor material layers, wherein respective ones of the plurality of two-dimensional semiconductor material layers are disposed between adjacent ones of the plurality of gate structures and the plurality of dielectric layers;
• and
• at least one source/drain region disposed on a side of the nanosheet structure, wherein the at least one source/drain region comprises a different material from the two-dimensional semiconductor material layers;
• wherein respective ones of the plurality of gate structures contact at least one of the plurality of two-dimensional semiconductor material layers.

A semiconductor device comprising:

• a nanosheet structure comprising:
• a plurality of gate structures alternately stacked with a plurality of dielectric layers;
• and
• a plurality of spacers disposed on sides of the plurality of gate structures at least one of over and under respective ones of the plurality of dielectric layers;
• and
• at least one source/drain region disposed on a side of the nanosheet structure;
• wherein sides of the respective ones of the plurality of dielectric layers contact a side of the at least one source/drain region;
• and
• wherein sides of respective ones of the plurality of spacers contact the side of the at least one source/drain region and are coplanar with the sides of the respective ones of the plurality of dielectric layers.