A power semiconductor device, a power converter including the same and a manufacturing method of power semiconductor device

A power semiconductor device, comprising:

• a substrate;
• a first epi layer of a first conductivity type disposed on the substrate;
• a second epi layer of the first conductivity type disposed on the first epi layer of the first conductivity type;
• a first well of a second conductivity type partially disposed in the first epi layer of the first conductivity type;
• a second well of the second conductivity type disposed on the second epi layer of the first conductivity type;
• an ion implantation region of the second conductivity type and a source region disposed in the second well of the second conductivity type;
• a source electrode disposed on the source region;
• a gate insulating layer in a trench region, wherein the trench region is disposed in a portion of the ion implantation region of the second conductivity type and the second epi layer of the first conductivity type are removed;
• a trench gate disposed on the gate insulating layer;
• an interlayer insulating layer disposed on the trench gate, and
• a gate electrode electrically connected to the trench gate.