US 2025/0098233 A1Published application

Semiconductor device

AssigneesKabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage Corporation

InventorsSaya SHIMOMURA, Hiroaki KATOU, Tsuyoshi KACHI

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Abstract

A semiconductor device includes first and second electrodes, a semiconductor part located between the first and second electrodes, a gate electrode located between the semiconductor part and the second electrode, and a structure body extending in the semiconductor part under the gate electrode. The semiconductor part includes first to fifth layers which are stacked in this order. The first to third and fifth layers are of a first conductivity type. The fourth layer is of a second conductivity type. The gate electrode faces the fourth layer. The structure body includes an insulating film, a conductive body, an insulating layer, and a silicide layer. The silicide layer is located at a lower end of the structure body. The lower end of the structure body contacts the second layer. The second layer includes a heavy metal. The third layer has a lower concentration of the heavy metal than the second layer.

Claims10

Dependent claims

A semiconductor device, comprising:

a first electrode;
a second electrode;
a semiconductor part located between the first electrode and the second electrode;
a gate electrode located in the semiconductor part, the gate electrode extending from the second electrode toward the first electrode;
and
a structure body located between the gate electrode and the first electrode, the structure body extending from the gate electrode side toward the first electrode side in the semiconductor part,
the semiconductor part including
a first layer located on the first electrode, the first layer being electrically connected to the first electrode, the first layer being of a first conductivity type,
a second layer located on the first layer, the second layer including a heavy metal, the second layer being of the first conductivity type,
a third layer located on the second layer, the third layer including the heavy metal, the third layer having a lower concentration of the heavy metal than the second layer, the third layer being of the first conductivity type,
a fourth layer located on the third layer, the fourth layer facing the gate electrode via a gate insulating film, the fourth layer being electrically connected to the second electrode, the fourth layer being of a second conductivity type, and
a fifth layer located on the fourth layer, the fifth layer being electrically connected to the second electrode, the fifth layer being of the first conductivity type,
the structure body including
a silicide layer contacting the second layer,
an insulating layer located on the silicide layer,
a conductive body located on the insulating layer, the conductive body extending from under the gate electrode toward the insulating layer, the conductive body being electrically isolated from the gate electrode, and
an insulating film located between the conductive body and the second layer and between the conductive body and the third layer,
a bottom surface of the silicide layer and at least a portion of a side surface of the silicide layer contacting the second layer.

15 more elements

A semiconductor device, comprising:

a first electrode;
a second electrode;
a semiconductor part located between the first electrode and the second electrode;
a gate electrode located in the semiconductor part, the gate electrode extending from the second electrode toward the first electrode;
and
a structure body located between the gate electrode and the first electrode, the structure body extending from the gate electrode side toward the first electrode side in the semiconductor part,
the semiconductor part including
a first layer located on the first electrode, the first layer being electrically connected to the first electrode, the first layer being of a first conductivity type,
a second layer located on the first layer, the second layer including a heavy metal, the second layer being of the first conductivity type,
a third layer located on the second layer, the third layer including the heavy metal, the third layer having a lower concentration of the heavy metal than the second layer, the third layer being of the first conductivity type,
a fourth layer located on the third layer, the fourth layer facing the gate electrode via a gate insulating film, the fourth layer being electrically connected to the second electrode, the fourth layer being of a second conductivity type, and
a fifth layer located on the fourth layer, the fifth layer being electrically connected to the second electrode, the fifth layer being of the first conductivity type,
the structure body including
an insulating layer contacting the second layer on the second layer,
a conductive body located on the insulating layer, the conductive body extending from under the gate electrode toward the insulating layer, the conductive body being electrically isolated from the gate electrode, and
an insulating film located between the conductive body and the second layer and between the conductive body and the third layer,
the insulating layer having a different crystal structure from the insulating film.

14 more elements

Dependencies are inferred from the claim text.

Facts

Application: 18/597,245Filed 6 Mar 2024
Priority: JP 2023-14949414 Sep 2023
Published: 20 Mar 2025
Term ends: Not estimatedThe source records don’t support an estimate.

Classification6 codes

H10D 30/668
Vertical dmos [vdmos] fets: having trench gate electrodes, e.g. UMOS transistors
H10D 62/103
Constructional design considerations for preventing surface leakage or controlling electric field concentration: for increasing or controlling the…
H10D 30/66
Double-diffused metal-oxide semiconductor [DMOS] FETs: vertical dmos [vdmos] fets
H10D 62/80
Semiconductor bodies, or regions thereof, of devices having potential barriers: characterised by the materials

Family

US 12,765,006 B2Related patent
US 2025/0098233 A1This patent

From the US filing history. Foreign family members aren’t listed.

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