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US 2025/0098229 A1Published application
Strain inducing trenches for source/drain regions
AssigneeInternational Business Machines Corporation
InventorsSagarika Mukesh, Ruilong Xie, Alexander Reznicek, Tsung-Sheng Kang
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Abstract
A semiconductor device comprises at least one epitaxial source/drain region, and a dielectric layer disposed in a trench in the at least one epitaxial source/drain region. The dielectric layer comprises one of a material with a negative coefficient of thermal expansion and a material with a positive coefficient of thermal expansion.
Claims20
A semiconductor device comprising:
- at least one epitaxial source/drain region;
- and
- a dielectric layer disposed in a trench in the at least one epitaxial source/drain region.
A semiconductor device comprising:
- a first nanosheet structure comprising a first plurality of gate structures alternately stacked with a first plurality of channel layers;
- a second nanosheet structure comprising a second plurality of gate structures alternately stacked with a second plurality of channel layers;
- and
- at least one epitaxial source/drain region disposed between the first and second nanosheet structures;
- and
- a dielectric layer disposed in a trench in the at least one epitaxial source/drain region.
3 more elements
A semiconductor device comprising:
- a first epitaxial source/drain region corresponding to a first transistor;
- a second epitaxial source/drain region corresponding to a second transistor;
- a first dielectric layer disposed in a first trench in the first epitaxial source/drain region;
- and
- a second dielectric layer disposed in a second trench in the second epitaxial source/drain region;
- wherein the first trench is disposed on a first side of the semiconductor device and the second trench is disposed on a second side of the semiconductor device opposite the first side.
3 more elements
Dependencies are inferred from the claim text.