Complementary field effect transistor (cfet) circuits and methods for making the same

A method of fabricating a semiconductor structure, the method comprising:

• providing a first field effect transistor (FET) of a first charge carrier type, comprising a first source/drain (S/D) region, a second S/D region, and a first gate;
• providing a second FET of a second charge carrier type, disposed above the first FET in a Z direction and comprising a third S/D region, a fourth S/D region, and a second gate;
• providing a frontside (FS) metal (FM) layer disposed above the second FET in the Z direction and comprising a plurality of FM conductors extending in an X direction and spaced apart from each other in a Y direction;
• providing a backside (BS) metal (BM) layer disposed below the first FET in the Z direction and comprising a plurality of BM conductors extending in the X direction and spaced apart from each other in the Y direction;
• and
• providing a vertical connector extending in the Z direction, wherein the vertical connector electrically couples one of the plurality of BM conductors to the third S/D region, the fourth S/D region, or the second gate.