Semiconductor device

Abstract

A semiconductor device according to an embodiment includes a first electrode; a first semiconductor region of a first conductivity type provided on the first electrode; a second semiconductor region of a second conductivity type provided on the first semiconductor region; a third semiconductor region of a first conductivity type provided on the second semiconductor region; a second electrode in contact with the second semiconductor region and the third semiconductor region at contact portions; a plurality of field plate electrodes provided in the first semiconductor region via insulating films and extending along a first direction; and a plurality of gate electrodes extending along a second direction different from the first direction. The plurality of gate electrodes have first conductive portions provided in the second semiconductor region via a gate insulating film, and second conductive portions coupled to the first conductive portions and provided on the insulating films.

Dependencies are inferred from the claim text.