Back to results
US 2025/0098208 A1Published application
Radiation hardened semicondcutor power device
AssigneeGE Aviation Systems LLC
InventorsCollin William Hitchcock, Biju Jacob
Life of this patent
Estimating the term…
Abstract
A radiation hardened semiconductor device including a heavily doped substrate of a semiconductor device, a drift layer having a substantially uniform doping concentration and a thickness is provided. The doping concentration and the thickness of the drift layer are such that when the semiconductor device is operating at a maximum voltage rating, an electrical field profile in the drift layer extends less than 80% of the thickness of the drift layer, providing the radiation hardened nature of the device.
Claims20
A semiconductor device comprising:
- a heavily doped substrate;
- and
- a drift layer disposed on the heavily doped substrate, the drift layer having a doping concentration and a thickness;
- wherein the doping concentration and the thickness of the drift layer are such that, when the semiconductor device is operating at a predetermined target operating voltage, an electrical field profile in the drift layer extends less than 80% of the thickness of the drift layer.
1 more element
A semiconductor device comprising:
- a heavily doped substrate;
- and
- a drift layer on the heavily doped substrate, the drift layer having a doping concentration and a thickness;
- wherein the doping concentration is selected based on reducing a drift layer resistivity of the drift layer operating at a predetermined target operating voltage, wherein an electric field profile in the drift layer extends n μm into the drift layer at the predetermined target operating voltage, and wherein the thickness of the drift layer is at least 20% greater than n μm.
1 more element
Dependencies are inferred from the claim text.