Back to results
US 2025/0098205 A1Published application
Non-conformal oxide liner and manufacturing methods thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMing-Ho Lin, Chun-Heng Chen, Xiong-Fei Yu, Chi On Chui
Life of this patent
Estimating the term…
Abstract
A method includes forming a fin protruding over a substrate; forming a conformal oxide layer over an upper surface and along sidewalls of the fin; performing an anisotropic oxide deposition or an anisotropic plasma treatment to form a non-conformal oxide layer over the upper surface and along the sidewalls of the fin; and forming a gate electrode over the fin, the conformal oxide layer and the non-conformal oxide layer being between the fin and the gate electrode.
Claims20
A method comprising:
- forming a fin protruding over a substrate;
- forming isolation regions on opposing sides of the fin, wherein the fin protrudes above an upper surface of the isolation regions distal from the substrate;
- forming a conformal oxide layer over an upper surface of the fin and along sidewalls of the fin;
- forming a non-conformal oxide layer over the upper surface of the fin and along the sidewalls of the fin by performing an anisotropic oxide deposition process, wherein the non-conformal oxide layer extends continuously from a first sidewall of the fin to a second opposing sidewall of the fin, wherein the non-conformal oxide layer extends continuously from the upper surface of the fin to the isolation regions;
- and
- forming a gate electrode over the fin, wherein the conformal oxide layer and the non-conformal oxide layer are between the fin and the gate electrode.
3 more elements
A method comprising:
- forming a fin protruding over a substrate;
- performing an anisotropic plasma treatment to convert a first exterior portion of the fin along an upper surface of the fin and a second exterior portion of the fin along sidewalls of the fin into a non-conformal oxide layer, wherein the first exterior portion is thicker than the second exterior portion;
- and
- forming a gate electrode over the fin, wherein the non-conformal oxide layer is between the fin and the gate electrode.
1 more element
A method comprising:
- forming a fin protruding above a substrate;
- forming a non-conformal gate dielectric layer over a top surface of the fin and along sidewalls of the fin, wherein the non-conformal gate dielectric layer has a first thickness over the top surface of the fin and has a second thickness along the sidewalls of the fin, the first thickness being different from the second thickness;
- forming a dummy gate electrode over the fin and over the non-conformal gate dielectric layer;
- forming a dielectric layer over the fin around the dummy gate electrode;
- removing the dummy gate electrode and the non-conformal gate dielectric layer under the dummy gate electrode to form an opening in the dielectric layer;
- and
- forming a replacement gate structure in the opening.
4 more elements
Dependencies are inferred from the claim text.