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US 2025/0098204 A1Published application
Gate-tie-down in backside power architecture using contact jumper and backside contact
AssigneeQUALCOMM Incorporated
InventorsDeepak SHARMA, Yan SUN, Shreesh NARASIMHA
Life of this patent
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Abstract
Disclosed are gate-tie-down (GTD) cells that utilize a backside power delivery scheme, where metal wires that deliver power are provided on the back of the die. The backside power may be delivered to the gates through S/Ds and through frontside contacts. As a result, ultra-low height standard cell can be enabled. Also higher area scaling may be achieved. Further, performance and power gain can be maximized.
Claims21
A gate-tie-down (GTD) cell, comprising:
- a gate extending in a first direction, the gate defining an edge of the GTD cell;
- a nano ribbon extending in a second direction different from the first direction, the nano ribbon being formed within the gate at least partially;
- a backside power (BSP) rail extending in the second direction, the BSP rail being formed below the gate and below the nano ribbon;
- a backside contact on and electrically coupled with the BSP rail;
- a source/drain (S/D) on and electrically coupled with the backside contact;
- a frontside contact on and electrically coupled with the S/D;
- and
- a jumper contact on and electrically coupled with the frontside contact and on and electrically coupled with the gate,
- wherein the gate is electrically coupled with the BSP rail through the jumper contact, the frontside contact, the S/D, and the backside contact.
6 more elements
A method of fabricating a gate-tie-down (GTD) cell, the method comprising:
- forming a gate extending in a first direction, the gate defining an edge of the GTD cell;
- forming a nano ribbon extending in a second direction different from the first direction, the nano ribbon being formed within the gate at least partially;
- forming a backside power (BSP) rail extending in the second direction, the BSP rail being formed below the gate and below the nano ribbon;
- forming a backside contact on and electrically coupled with the BSP rail;
- forming a source/drain (S/D) on and electrically coupled with the backside contact;
- forming a frontside contact on and electrically coupled with the S/D;
- and
- forming a jumper contact on and electrically coupled with the frontside contact and on and electrically coupled with the gate,
- wherein the gate is electrically coupled with the BSP rail through the jumper contact, the frontside contact, the S/D, and the backside contact.
6 more elements
Dependencies are inferred from the claim text.