Back to results
US 2025/0098199 A1Published application
Corrosion Resistant Metal Structures for Wide Bandgap Semiconductor Devices
AssigneeWolfspeed, Inc.
InventorsKyle Bothe, Evan Bertrue Jones, Daniel Kevin Etter
Life of this patent
Estimating the term…
Abstract
Semiconductor devices are provided. In one example, the semiconductor device includes a wide bandgap semiconductor structure. The semiconductor device includes a metal structure on the wide bandgap semiconductor structure. The metal structure has a metal layer. The metal layer has a metal selected from the group consisting of ruthenium, osmium, rhodium, or iridium.
Claims27
A semiconductor device, comprising:
- a wide bandgap semiconductor structure;
- a metal structure on the wide bandgap semiconductor structure;
- and
- wherein the metal structure comprises a metal layer, the metal layer comprising a metal selected from the group consisting of ruthenium, osmium, rhodium, or iridium.
1 more element
10-11. (canceled)
-14. (canceled)
-17. (canceled)
(canceled)
(canceled)
A transistor device, comprising:
- a substrate;
- a Group III-nitride semiconductor structure on the substrate, the Group III-nitride semiconductor structure comprising a barrier layer and a channel layer, the barrier layer having a different bandgap relative to the channel layer;
- a gate contact, source contact, and a drain contact, wherein the gate contact is between the source contact and the drain contact;
- and
- wherein the gate contact comprises a plurality of gate stack layers, wherein at least one of the gate stack layers is a metal layer comprising a metal selected from the group consisting of ruthenium, osmium, rhodium, or iridium.
2 more elements
-49. (canceled)
A method of forming a semiconductor device, comprising:
- forming a wide bandgap semiconductor structure on a substrate;
- forming a gate contact on the wide bandgap semiconductor structure;
- and
- wherein the gate contact comprises a metal layer, the metal layer comprising a metal selected from the group consisting of ruthenium, osmium, rhodium, or iridium.
1 more element
-69. (canceled)
Dependencies are inferred from the claim text.