Dielectric Fin Structures for Semiconductor Devices
AssigneeTaiwan Semiconductor Manufacturing Co., Lid.
InventorTzu-Ging LIN
Life of this patent
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Abstract
The present disclosure describes a semiconductor device having a dielectric fin structure. The semiconductor device includes a channel structure on a substrate and a dielectric fin structure on the substrate and adjacent to the channel structure. The channel structure extends along a first direction. The dielectric fin structure includes a stiff dielectric material and extends along a second direction parallel to the first direction. The semiconductor device further includes an isolation structure extending through the channel structure. The isolation structure is in contact with the dielectric fin structure.
Claims20
A semiconductor structure, comprising:
- a channel structure on a substrate, wherein the channel structure extends along a first direction;
- a dielectric fin structure on the substrate and adjacent to the channel structure, wherein the dielectric fin structure comprises a stiff dielectric material and extends along a second direction parallel to the first direction;
- and
- an isolation structure extending through the channel structure, wherein the isolation structure is in contact with the dielectric fin structure.
A semiconductor device, comprising:
- a plurality of channel structures on a substrate;
- a plurality of dielectric fin structures comprising a stiff dielectric material on the substrate, wherein the plurality of channel structures and the plurality of dielectric fin structures are arranged in an alternate configuration;
- a gate structure surrounding the plurality of channel structures and the plurality of dielectric fin structures;
- and
- an isolation structure extending through the gate structure and at least one of the plurality of channel structures, wherein the isolation structure is in contact with the at least one of the plurality of dielectric fin structures.
A method, comprising:
- forming a channel structure on a substrate, wherein the channel structure extends along a first direction;
- forming a dielectric fin structure on the substrate and adjacent to the channel structure, wherein the dielectric fin structure comprises a stiff dielectric material and extends along a second direction parallel to the first direction;
- and
- forming an isolation structure extending through the channel structure, wherein the isolation structure is in contact with the dielectric fin structure.
Dependencies are inferred from the claim text.