Semiconductor structure and method for forming the same
AssigneeTaiwan-Asia Semiconductor Corporation
InventorsYu-Wei CHANG, Tzuen-Yang YE
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Abstract
The present invention relates to a semiconductor structure and a method for forming the same. The semiconductor structure comprises a substrate, a channel layer, a barrier layer, a source electrode, a gate electrode, a drain electrode, and a cap layer. The channel layer is disposed on the substrate, the barrier layer is disposed on the channel layer, and the source electrode, the gate electrode, and the drain electrode are disposed on the barrier layer. Except the regions directly above the source electrode and the drain electrode, the cap layer covers the source electrode and the drain electrode.
Claims16
A semiconductor structure, comprising:
- a substrate;
- a channel layer, disposed on the substrate;
- a barrier layer, disposed on the channel layer;
- a source electrode, a gate electrode, a drain electrode, respectively disposed on the barrier layer;
- and
- a cap layer, wherein the conductive cap layer covers the source electrode and the drain electrode except the regions directly above the source electrode and the drain electrode.
A semiconductor structure, comprising:
- a substrate;
- a channel layer, disposed on the substrate;
- a barrier layer, disposed on the channel layer;
- a source electrode, a gate electrode, a drain electrode, respectively disposed on the barrier layer;
- and
- a conductive cap layer, wherein the conductive cap layer covers the source electrode and the drain electrode.
A method of forming a semiconductor structure, comprising:
- forming a channel layer, a barrier layer on a substrate and an interface between the channel layer and the barrier layer having a two-dimensional electron gas;
- forming a source electrode, a drain electrode, respectively disposed on the barrier layer;
- forming a cap layer, covering the source electrode and the drain electrode;
- and
- heating the source electrode and the drain electrode so that the source electrode and the drain electrode respectively has an ohmic contact with the barrier layer.
Dependencies are inferred from the claim text.