Semiconductor device

The semiconductor device, comprising:

• a semiconductor substrate having a first main surface and a second main surface opposite the first main surface;
• and
• an emitter wiring provided on the first main surface via an insulating film,
• wherein when viewed from the first main surface side, the semiconductor substrate includes:
• an active region includes a plurality of IGBTs formed on the semiconductor substrate;
• a termination region arranged to surround the active region;
• and
• a main junction region arranged between the active region and the termination region,
• wherein the semiconductor substrate of the main junction region includes:
• a drift layer of a first conductivity type;
• and
• a junction impurity layer of a second conductivity type provided closer to the first main surface side than the drift layer,
• wherein the semiconductor substrate in the termination region includes:
• the drift layer;
• and
• a floating layer of the second conductivity type provided closer to the first main surface side than the drift layer,
• wherein at least the main junction region of the semiconductor substrate includes:
• a trench electrode provided inside a trench formed in the first main surface;
• and
• a trench insulating film provided between the trench electrode and the semiconductor substrate,
• wherein when viewed from the first main surface side, the trench electrode includes a portion extending in one direction from the main junction region towards the termination region,
• wherein the trench electrode and the junction impurity layer are connected to the emitter wiring in the main junction region, and
• wherein the IGBT comprises:
• the drift layer;
• a barrier layer of the first conductivity type provided closer to the first main surface side than the drift layer;
• a channel layer of the second conductivity type provided closer to the first main surface side than the barrier layer;
• an emitter layer of the first conductivity type provided closer to the first main surface side than the channel layer;
• gate trench electrodes provided so as to sandwich the barrier layer, the channel layer, and the emitter layer in another direction crossing the one direction in a plane parallel to the first main surface;
• a gate trench insulating film provided between each of the gate trench electrodes and the semiconductor substrate;
• and
• an IGBT floating layer of the second conductivity type provided on the opposite side of the barrier layer, the channel layer, and the emitter layer across the gate trench electrode.