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AssigneesKabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage Corporation
InventorKazusa ARIMA
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A manufacturing method a semiconductor device according to an embodiment is a manufacturing method a semiconductor device located on a semiconductor wafer within a region surrounded by a first dicing line extending in a first direction and a second dicing line perpendicular to the first direction, the semiconductor device including a cell region and a termination region, the cell region including a semiconductor device located within a semiconductor substrate, the termination region including a metal wiring line located on the semiconductor substrate and electrically connected to the semiconductor device. In this method, a stopper film is formed around the metal wiring line in the termination region, a protection film covering the metal wiring line and ending at a side surface of the stopper film is formed, and the semiconductor wafer is diced along the first dicing line and the second dicing line.
A manufacturing method of a semiconductor device, the semiconductor device being located on a semiconductor wafer within a region surrounded by a first dicing line extending in a first direction and a second dicing line perpendicular to the first direction, the semiconductor device including a cell region and a termination region, the cell region including a semiconductor device located within a semiconductor substrate, the termination region including a metal wiring line located on the semiconductor substrate and electrically connected to the semiconductor device, the method comprising:
A semiconductor device comprising:
Dependencies are inferred from the claim text.