Symmetrical 3d bipolar nanosheet transistor

A semiconductor device, comprising:

• a first semiconductor structure having a first conductive type, the first semiconductor structure comprising an upper portion and a lower portion;
• a second semiconductor structure having a second conductive type opposite to the first conductive type;
• a third semiconductor structure having the second conductive type,
• wherein the lower portion of the first semiconductor structure is disposed between the second semiconductor structure and the third semiconductor structure and is in electrical contact with the second semiconductor structure and the third semiconductor structure.

A method for fabricating semiconductor devices, comprising:

• forming a lower portion of a first semiconductor structure vertically interposed between a first dielectric structure and a second dielectric structure;
• epitaxially growing a second semiconductor structure and a third semiconductor structure from the lower portion of the first semiconductor structure;
• forming a first metal structure and a second metal structure to contact the second semiconductor structure and the third semiconductor structure, respectively, and
• forming an upper portion of the first semiconductor structure that extends through at least the second dielectric structure.