Integrated circuit devices and methods of manufacturing the same

A method of manufacturing an integrated circuit device, the method comprising:

• forming a lower electrode and an insulating support pattern on a substrate, the lower electrode comprising a first metal, the insulating support pattern being configured to support the lower electrode;
• selectively forming a conductive interface layer only on a surface of the lower electrode, from among the insulating support pattern and the lower electrode, the conductive interface layer comprising a metal oxide film comprising at least one metal element;
• densifying the conductive interface layer by supplying a post-processing gas to the conductive interface layer;
• forming a dielectric film in contact with the conductive interface layer and the insulating support pattern;
• and
• forming an upper electrode opposite the lower electrode with the conductive interface layer and the dielectric film therebetween, the upper electrode comprising a second metal.

A method of manufacturing an integrated circuit (IC) device, the method comprising:

• forming a plurality of lower electrodes and an insulating support pattern on a substrate, the plurality of lower electrodes comprising a first metal, the insulating support pattern being configured to support the plurality of lower electrodes;
• selectively forming a conductive interface layer only on surfaces of the plurality of lower electrodes, from among the insulating support pattern and the plurality of lower electrodes, the conductive interface layer comprising a metal oxide film comprising at least one metal element;
• supplying a post-processing gas to the conductive interface layer and densifying the conductive interface layer;
• forming a dielectric film in contact with the conductive interface layer and the insulating support pattern;
• and
• forming an upper electrode opposite the plurality of lower electrodes with the conductive interface layer and the dielectric film therebetween, the upper electrode comprising a second metal,
• wherein the selectively forming of the conductive interface layer comprises:
• performing a deposition inhibition treatment on a surface of the insulating support pattern, from among the plurality of lower electrodes and the insulating support pattern, by supplying a first pre-processing gas for selectively inhibiting deposition onto the insulating support pattern and the plurality of lower electrodes;
• selectively forming an adsorption layer of a first precursor only on the surfaces of the plurality of lower electrodes, from among the insulating support pattern that has been treated to inhibit deposition and the plurality of lower electrodes, by supplying the first precursor comprising a first metal element to the insulating support pattern that has been treated to inhibit deposition and the plurality of lower electrodes;
• forming a first metal oxide film comprising the first metal element from the adsorption layer of the first precursor by supplying a first oxidizing gas onto a resultant structure comprising the adsorption layer of the first precursor;
• and
• forming a first interface sub-layer in contact with the plurality of lower electrodes by repeating the selective forming of the adsorption layer of the first precursor and the forming of the first metal oxide film plural times.