Electronic devices including ferroelectric materials, and related memory devices

Abstract

An electronic device comprises ferroelectric random access memory cells. One or more of the ferroelectric random access memory cells comprises a crystallized ferroelectric material and an electrode adjacent to the crystallized ferroelectric material. The crystallized ferroelectric material exhibits a dominant crystallographic orientation. The electrode comprises a crystalline material exhibiting an additional dominant crystallographic orientation inducing the dominant crystallographic orientation of the crystallized ferroelectric material. A memory device is also disclosed comprising an array of ferroelectric memory cells. The ferroelectric memory cell comprises a crystallized ferroelectric material having a first side and a second side opposite the first side, and an electrode adjacent the first side of the ferroelectric material. The crystallized ferroelectric material comprises a crystallized hafnium-based material exhibiting a dominant (200) crystallographic orientation. The electrode comprises a crystalline titanium nitride material formulated to induce the dominant (200) crystallographic orientation of the crystallized ferroelectric material.

Dependencies are inferred from the claim text.