Semiconductor memory device, method for fabricating the same and electronic system including the same
AssigneeSamsung Electronics Co., Ltd.
InventorsHak Seon KIM, Kang Oh YUN, Dong Jin LEE, Jae Duk LEE
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AssigneeSamsung Electronics Co., Ltd.
InventorsHak Seon KIM, Kang Oh YUN, Dong Jin LEE, Jae Duk LEE
Estimating the term…
A semiconductor memory device includes a peripheral circuit structure; and a cell structure including a cell substrate and a gate electrode, on the peripheral circuit structure. The peripheral circuit structure includes a peripheral circuit board including a first surface facing the cell structure and a second surface opposite to the first surface, a first circuit element on the first surface of the peripheral circuit board, a first wiring line electrically connected to the first circuit element in a first interlayer insulating layer, a capacitor dielectric layer covering the second surface of the peripheral circuit board, a first capacitor electrode in the capacitor dielectric layer, a second capacitor electrode spaced apart from the first capacitor electrode in the capacitor dielectric layer, and a first connection via electrically connecting the first capacitor electrode with the first wiring line by passing through the peripheral circuit board.
A semiconductor memory device comprising:
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A semiconductor memory device comprising:
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(canceled)
An electronic system comprising:
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Dependencies are inferred from the claim text.