Integrated assemblies having vertically-spaced channel material segments, and methods of forming integrated assemblies

A method of forming an integrated structure, comprising:

• forming a vertical stack of alternating first and second levels;
• the first levels comprising first material and the second levels comprising second material;
• forming an opening to extend through the stack;
• forming third material, dielectric-barrier material, charge-blocking material, charge-storage material, charge-passage material and channel material within the opening;
• removing the second material;
• converting the third material to a conductive material;
• forming conductive structures directly against the conductive material;
• forming gaps to create segments of the conductive material;
• and
• extending the gaps through the dielectric-barrier material, the charge-blocking material and the charge storage material to form blocks comprising the dielectric-barrier material, the charge-blocking material and the charge storage material, the blocks being vertically spaced from one another.