US 2025/0098152 A1 · SEMICONDUCTOR DEVICE INCLUDING AIR GAP PROTECTION STRUCTURE WITH UNEVEN THICKNESS AND MANUFACTURING METHOD THEREOF

Abstract

A semiconductor device and method for manufacturing the same are provided. The semiconductor device includes a substrate, a bit line, an isolation spacer, a landing pad, and air gap protection structure. The bit line is disposed on the substrate. The isolation spacer is disposed on a side of the bit line. The isolation spacer includes an air gap. The landing pad is disposed over the bit line. The air gap protection structure covers the landing pad and the air gap. The air gap protection structure has an upper portion above a top surface of the landing pad and a lower portion below the upper portion. A ratio between a thickness of the lower portion and a thickness of the upper portion is greater than 0.6 and less than 0.8.

Claims10

Dependent claims

A method of manufacturing a semiconductor device, comprising:

providing a substrate;
forming a bit line on the substrate;
forming an isolation spacer on a side of the bit line, wherein the isolation spacer comprises an air gap;
forming a landing pad over the bit line;
and
performing a deposition process to form an air gap protection structure to cover the landing pad and the air gap, wherein a temperature during the deposition process ranges between about 530° C. and about 570° C.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application

18/514,081Filed 20 Nov 2023

Priority

20 Sep 2023

Published

20 Mar 2025

Term ends

Not estimatedThe source records don’t support an estimate.

Classification5 codes

H10B 12/482
Data lines or contacts therefor: bit lines
H10B 12/02
Manufacture or treatment: for one transistor one-capacitor [1T-1C] memory cells
H10B 12/0335
The capacitor extending over the transistor: making a connection between the transistor and the capacitor, e.g. plug
H10B 12/315
Having a storage electrode stacked over the transistor: with the capacitor higher than a bit line

Semiconductor device including air gap protection structure with uneven thickness and manufacturing method thereof

Life of this patent

Semiconductor device including air gap protection structure with uneven thickness and manufacturing method thereof

Life of this patent

Abstract

Claims10