Semiconductor structure and method of manufacturing the same

Abstract

Embodiments of this disclosure provide a method of manufacturing a semiconductor structure. The method includes the following steps. A substrate including active areas and insulation areas between the active areas is provided. A plurality of bit line structures are formed on a top surface of the substrate. A first oxide layer is deposited on each of the bit line structures. A spacer structure is deposited on the first oxide layer. Besides, the spacer structure is a multilayer structure and includes a second oxide layer. The first oxide layer and second oxide layer are removed to form a first air gap and a second air gap as a spacer. A plurality of landing pads is formed over the plurality of bit line structures and the first air gap and the second air gap. In addition, a semiconductor structure is also provided in this disclosure.

Dependencies are inferred from the claim text.