Semiconductor structure and method for manufacturing same

A method for manufacturing a semiconductor structure, comprising:

• providing a substrate;
• forming a memory cell group on the substrate, wherein the memory cell group comprises a plurality of vertically stacked memory cells, each one of the plurality of memory cells comprises a transistor and a capacitor, and the capacitor extends along a first direction parallel to the substrate;
• and
• forming a first conductive structure, wherein the first conductive structure is located on a first side surface of the memory cell group, the first conductive structure and the memory cell group are arranged along a second direction parallel to the substrate, the first conductive structure extends along a third direction perpendicular to the substrate, the first conductive structure is coupled to a plurality of capacitors in the memory cell group, and the first direction and the second direction intersect with each other.