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US 2025/0098065 A1Published application
Bonded body and ceramic circuit board using same
AssigneesKabushiki Kaisha Toshiba, Toshiba Materials Co., Ltd.
InventorsSachiko FUJISAWA, Seiichi SUENAGA, Yoichiro MORI
Life of this patent
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Abstract
A bonded body according to an embodiment includes a nitride ceramic member, and a metal member bonded with the nitride ceramic member via a bonding layer. A titanium nitride layer that includes titanium nitride as a major component is formed at a nitride ceramic member and the interface between the bonding layer. The titanium nitride layer includes a location at which an oxygen amount is not less than 1 at %.
Claims20
A bonded body, comprising:
- a nitride ceramic member;
- and
- a metal member bonded with the nitride ceramic member via a bonding layer,
- a titanium nitride layer being formed at an interface between the nitride ceramic member and the bonding layer, the titanium nitride layer including titanium nitride as a major component,
- the titanium nitride layer including a location at which an oxygen amount is not less than 1 at %.
2 more elements
A bonded body, comprising:
- a nitride ceramic member;
- and
- a metal member bonded with the nitride ceramic member via a bonding layer,
- the bonding layer including a Ti-rich region,
- in the Ti-rich region, when a sum of a Ti content, a Sn content, a Cu content, a nitrogen content, and an oxygen content is taken as 100 at %, the Ti content being not less than 30 at % and not more than 50 at %, the Sn content being not less than 20 at % and not more than 40 at %, the Cu content being not less than 0 at % and not more than 20 at %, the nitrogen content being not less than 1 at % and not more than 15 at %, and the oxygen content being not less than 0 at % and not more than 3 at %,
- an area ratio of the Ti-rich region being within a range of not less than 5% and not more than 30%.
3 more elements
Dependencies are inferred from the claim text.