Semiconductor switch
AssigneeCambridge Gan Devices Limited
InventorsFlorin UDREA, John FINDLAY
Life of this patent
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AssigneeCambridge Gan Devices Limited
InventorsFlorin UDREA, John FINDLAY
Estimating the term…
A semiconductor switch comprising a first main terminal, a second main terminal, and a control terminal, the semiconductor switch including a III-nitride integrated circuit, the III-nitride integrated circuit including a high voltage HEMT, the high voltage HEMT comprising high voltage HEMT source terminal, a high voltage HEMT drain terminal, and a high voltage HEMT gate terminal, and at least part of an interface circuit. The semiconductor switch includes a high voltage transistor device that includes a transistor device first terminal, a transistor device second terminal, and a transistor device gate terminal, wherein the high voltage HEMT source terminal and the transistor device first terminal are operatively connected to the first main terminal, the high voltage HEMT drain terminal and the transistor device second terminal are operatively connected to the second main terminal. The high voltage HEMT gate terminal is operatively connected to the control terminal via the interface circuit.
A semiconductor switch comprising a first main terminal, a second main terminal, and a control terminal, the semiconductor switch comprising:
A semiconductor switch comprising a first main terminal, a second main terminal, and a control terminal, the semiconductor switch comprising:
Dependencies are inferred from the claim text.