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US 2025/0096796 A1Published application
Inductive drain and/or body ladders in rf switch stacks
AssigneepSemi Corporation
InventorsAlper GENC, Peter BACON
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Abstract
Methods and devices to reduce the gate-induced drain/body leakage current (GIDL) generated in FET switch stacks when in OFF state are disclosed. Such devices include inductors as part of bias networks coupled with drain/source terminals and/or body terminals of the transistors within the switch stack. Hybrid approaches where resistors in combination with inductors are implemented as part the bias network are also described.
Claims1
A switch stack comprising:
- a plurality of field-effect transistors (FETs) arranged in series and connected at one end to a first node and at another end to a second node;
- a drain bias ladder comprising one or more drain inductors coupled across drain and source terminals of corresponding one or more first FETs of the plurality of FETs.
Dependencies are inferred from the claim text.