Semiconductor switch
AssigneeCambridge Gan Devices Limited
InventorsFlorin UDREA, John William FINDLAY
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Abstract
A semiconductor switch comprising a high-electron-mobility transistor (HEMT) (e.g. a III-nitride HEMT). The semiconductor switch may be a combined switch also comprising a high voltage transistor device such as an insulated-gate bipolar transistor (IGBT), a metal-oxide-semiconductor field-effect transistor (MOSFET), or a superjunction. The high voltage transistor device may be a silicon or silicon carbide device.
Claims20
A semiconductor switch comprising a first main terminal, a second main terminal, and a control terminal, the semiconductor switch comprising:
- at least one high voltage HEMT, the high voltage HEMT comprising a high voltage HEMT source terminal, a high voltage HEMT drain terminal, and a high voltage HEMT gate terminal;
- and
- at least one high voltage transistor device, the high voltage transistor device comprising a transistor device first terminal, a transistor device second terminal, and a transistor device gate terminal;
- wherein the high voltage HEMT source terminal and the transistor device first terminal are operatively connected to the first main terminal;
- wherein the high voltage HEMT drain terminal and the transistor device second terminal are operatively connected to the second main terminal;
- and
- wherein the high voltage HEMT gate terminal is operatively connected to the control terminal;
- wherein the control terminal is operatively connected to a first driver output of a driver, and wherein the transistor device gate terminal is operatively connected to a second driver output of a driver;
- and
- wherein the control terminal is configured to be driven, by the driver via the first driver output, within a first driving voltage range;
- and
- wherein the transistor device gate terminal is configured to be driven, by the driver via the second driver output, within a second driving voltage range.
A method of operating a semiconductor switch, the semiconductor switch comprising a first main terminal, a second main terminal, and a control terminal, the semiconductor switch comprising:
- a high voltage HEMT, the high voltage HEMT comprising a high voltage HEMT source terminal, a high voltage HEMT drain terminal, and a high voltage HEMT gate terminal;
- and
- a high voltage transistor device, the high voltage transistor device comprising a transistor device first terminal, a transistor device second terminal, and a transistor device gate terminal;
- wherein the high voltage HEMT source terminal and the transistor device first terminal are operatively connected to the first main terminal;
- and
- wherein the high voltage HEMT drain terminal and the transistor device second terminal are operatively connected to the second main terminal;
- wherein the method comprises:
- driving the control terminal, by a driver via a first driver output, within a first driving voltage range;
- and
- driving the transistor device gate terminal, by a driver via a second driver output, within a second driving voltage range.
A semiconductor switch comprising a HEMT, the HEMT comprising a gate terminal, the gate terminal being operatively connected to a first driver output of a driver and to a second driver output of the driver;
- wherein:
- when the semiconductor switch is in a turn-off mode, the gate terminal is configured to selectably receive either:
- a regular turn-off signal from the first driver output;
- or
- a delayed turn-off signal, or a slower turn-off signal, from the second driver output.
Dependencies are inferred from the claim text.