Doherty amplifier with isolation structure

A Doherty amplifier die comprising:

• a substrate having a bandgap of above about 2 eV;
• a main amplifier on the substrate;
• at least one peak amplifier on the substrate;
• an input network on the substrate comprising (i) an input match network and (ii) an input combiner comprising a plurality of components, the input network connected to a first input of the main amplifier and to a second input of the at least one peak amplifier;
• an output combiner on the substrate connected to a first output of the main amplifier and to a second output of the at least one peak amplifier;
• and
• an isolation structure arranged on the substrate between the input network and the output combiner,
• and the isolation structure is configured to isolate the input network and the output combiner.

A Doherty amplifier device comprising:

• a substrate having a bandgap of above about 2 eV, the substrate having a first surface and a second surface;
• a main amplifier on the first surface of the substrate;
• at least one peak amplifier on the first surface of the substrate;
• an input network on the first surface of the substrate connected to a first input of the main amplifier and to a second input of the at least one peak amplifier;
• an output combiner on the first surface of the substrate connected to a first output of the main amplifier and to a second output of the at least one peak amplifier;
• an isolation structure arranged on one or more vias that extend into the first surface of the substrate between the input network and the output combiner, the isolation structure configured to isolate the input network and the output combiner;
• a printed circuit board;
• and
• one or more conductive pillar structures that protrude from the first surface of the substrate and are electrically connected to the one or more conductive vias and the printed circuit board.