Power transistors with resonant clamping circuits

A half-bridge circuit comprising:

• a high-side transistor circuit including:
• a first metal-oxide semiconductor field-effect transistor (MOSFET) including a gate, a source, and a drain, the first MOSFET having a first breakdown voltage;
• and
• a first clamping circuit including:
• a first diode having a second breakdown voltage that is less than the first breakdown voltage, a cathode of the first diode being coupled with the drain of the first MOSFET;
• and
• a first inductor having a first terminal coupled with an anode of the first diode, and a second terminal coupled with the source of the first MOSFET;
• and
• a low-side transistor circuit including:
• a second MOSFET including a gate, a source, and a drain, the second MOSFET having a third breakdown voltage, the drain of the second MOSFET being coupled with the source of the first MOSFET;
• and
• a second clamping circuit including:
• a second diode having a fourth breakdown voltage that is less than the third breakdown voltage, a cathode of the second diode being coupled with the drain of the second MOSFET;
• and
• a second inductor having a first terminal coupled with an anode of the second diode, and a second terminal coupled with the source of the second MOSFET.

A power converter circuit comprising:

• an output impedance circuit;
• and
• a half-bridge circuit coupled with the output impedance circuit, the half-bridge circuit including:
• a high-side transistor circuit including:
• a first metal-oxide semiconductor field-effect transistor (MOSFET) including a gate, a source, and a drain, the first MOSFET having a first breakdown voltage;
• and
• a first clamping circuit including:
• a first diode having a second breakdown voltage that is less than the first breakdown voltage, a cathode of the first diode being coupled with the drain of the first MOSFET;
• and
• a first inductor having a first terminal coupled with an anode of the first diode, and a second terminal coupled with the source of the first MOSFET;
• and
• a low-side transistor circuit including:
• a second MOSFET including a gate, a source, and a drain, the second MOSFET having a third breakdown voltage, the drain of the second MOSFET being coupled with the source of the first MOSFET;
• and
• a second clamping circuit including:
• a second diode having a fourth breakdown voltage that is less than the third breakdown voltage, a cathode of the second diode being coupled with the drain of the second MOSFET;
• and
• a second inductor having a first terminal coupled with an anode of the second diode, and a second terminal coupled with the source of the second MOSFET.