Semiconductor device structure and method of manufacturing the same

A method of manufacturing a semiconductor device structure, comprising:

• providing a substrate;
• forming a first nitride semiconductor layer on the substrate;
• forming a second nitride semiconductor layer on the first nitride semiconductor layer;
• forming a first transistor on the second nitride semiconductor layer, wherein the first transistor comprises a first control electrode, a first current electrode and a second current electrode;
• and
• forming a clamping device on the second nitride semiconductor layer, wherein the clamping device comprises a second transistor and a third transistor electrically coupled with the second transistor, and the clamping device is electrically coupled with the first current electrode and the second current electrode of the first transistor.

A semiconductor device structure, comprising:

• a substrate;
• a first nitride semiconductor layer disposed on the substrate;
• a second nitride semiconductor layer disposed on the first nitride semiconductor layer;
• a first transistor disposed on the second nitride semiconductor layer, wherein the first transistor comprises a first control electrode, a first current electrode and a second current electrode;
• and
• a clamping device disposed on the second nitride semiconductor layer, wherein the clamping device comprises a second transistor and a third transistor, the second transistor comprises a second control electrode, a third current electrode, and fourth current electrode, the third transistor comprises a third control electrode and a fifth current electrode, and wherein
• the third current electrode of the second transistor is coupled with the third control electrode of the third transistor, a first potential midpoint is connected to the fifth current electrode of the third transistor and the first current electrode of the first transistor, and a second potential midpoint is connected to the fourth current electrode of the second transistor and the second current electrode of the first transistor.