Package comprising a bridge located between metallization portions

A package comprising:

• a first metallization portion comprising:
• at least one first dielectric layer;
• and
• a first plurality of metallization interconnects;
• a first integrated device coupled to the first metallization portion through at least a first plurality of solder interconnects;
• a bridge coupled to the first metallization portion through at least a second plurality of solder interconnects;
• an encapsulation layer coupled to the first metallization portion;
• a second metallization portion coupled to the bridge and the encapsulation layer, such that the first integrated device, the bridge and the encapsulation layer are located between the first metallization portion and the second metallization portion, wherein the second metallization portion comprises:
• at least one second dielectric layer;
• and
• a second plurality of metallization interconnects;
• and
• a second integrated device coupled to the second metallization portion through at least a third plurality of solder interconnects, wherein the second integrated device and the bridge at least partially vertically overlap.