Stacked semiconductor device

A method for fabricating a semiconductor device assembly, comprising:

• providing a wafer of logic dies;
• providing a first plurality of stacked semiconductor dies;
• providing a second plurality of stacked semiconductor dies;
• coupling the first plurality of stacked semiconductor dies to the wafer of logic dies at a first lateral location;
• coupling the second plurality of stacked semiconductor dies to the wafer of logic dies at a second lateral location different from the first lateral location;
• disposing a first dielectric material at the wafer of logic dies between the first plurality of stacked semiconductor dies and the second plurality of stacked semiconductor dies;
• providing a third plurality of stacked semiconductor dies;
• providing a fourth plurality of stacked semiconductor dies;
• mounting the third plurality of stacked semiconductor dies to the first plurality of stacked semiconductor dies to electrically couple the third plurality of stacked semiconductor dies and the first plurality of stacked semiconductor dies;
• mounting the fourth plurality of stacked semiconductor dies to the first plurality of stacked semiconductor dies to electrically couple the fourth plurality of stacked semiconductor dies and the second plurality of stacked semiconductor dies;
• and
• disposing a second dielectric material at the first dielectric material between the third plurality of stacked semiconductor dies and the fourth plurality of stacked semiconductor dies.

A semiconductor device assembly, comprising:

• a logic die;
• a first plurality of stacked memory dies electrically coupled with the logic die;
• a first dielectric material disposed around the first plurality of stacked memory dies;
• a second plurality of stacked memory dies mounted on and electrically coupled with the first plurality of stacked memory dies;
• and
• a second dielectric material disposed at the first dielectric material and surrounding the second plurality of stacked memory dies,
• wherein the second plurality of stacked memory dies and the second dielectric material couple with the first plurality of stacked memory dies and the first dielectric layer, respectively, through a third dielectric material.