Semiconductor package structures and methods of forming same

A method comprising:

• encapsulating a first integrated circuit die in a first encapsulant, the first integrated circuit die comprising a first substrate and active devices;
• forming a first redistribution structure over the first integrated circuit die and the first encapsulant;
• forming a second integrated circuit die comprising a second substrate and active devices, forming the second integrated circuit die comprising:
• forming through vias in the second substrate;
• forming a second redistribution structure over the through vias and the second substrate, the second redistribution structure being electrically coupled to the through vias;
• forming a first set of conductive vias over and electrically coupled to the second redistribution structure, the first set of conductive vias being on a first side of the second substrate;
• thinning a second side of the second substrate, the thinning exposing the through vias;
• bonding the first integrated circuit die to the second integrated circuit die;
• encapsulating the second integrated circuit die with a second encapsulant;
• and
• forming a second set of conductive vias over and electrically coupled to the first set of conductive vias, the first and second sets of conductive vias forming stacked conductive vias.

A structure comprising:

• a first integrated circuit die bonded to a second integrated circuit die, the first integrated circuit die being in a first encapsulant, the first integrated circuit die comprising:
• a first substrate;
• active devices;
• through vias in the first substrate;
• a first redistribution structure over the through vias and the first substrate, the first redistribution structure being electrically coupled to the through vias;
• a first set of conductive vias over and electrically coupled to the first redistribution structure, the first set of conductive vias being on a first side of the first substrate;
• and
• a second set of conductive vias over and electrically coupled to the first set of conductive vias, the first and second sets of conductive vias forming stacked conductive vias.