Back to results
US 2025/0096197 A1Published application
Scalable embedded silicon bridge via pillars in lithographically defined vias, and methods of making same
AssigneeIntel Corporation
InventorsAdel A. ELSHERBINI, Henning BRAUNISCH, Javier SOTO GONZALEZ, Shawna M. LIFF
Life of this patent
Estimating the term…
Abstract
An embedded silicon bridge system including tall interconnect via pillars is part of a system in package device. The tall via pillars may span a Z-height distance to a subsequent bond pad from a bond pad that is part of an organic substrate that houses the embedded silicon bridge.
Claims20
A device, comprising:
- an interconnect bridge over a trace layer of an organic substrate, the interconnect bridge having a top surface, a bottom surface, a first side, and a second side opposite the first side;
- a first dielectric layer having a top surface and a bottom surface, the bottom surface on the trace layer, and the top surface below the top surface of the interconnect bridge, the first dielectric layer having a first portion proximate the first side of the interconnect bridge, and the first dielectric layer having a second portion proximate the second side of the interconnect bridge;
- a first bond pad over the top surface of the first portion of the first dielectric layer, the first bond pad having a bottom surface above the bottom surface of the interconnect bridge;
- a second bond pad over the top surface of the second portion of the first dielectric layer, the second bond pad having a bottom surface above the bottom surface of the interconnect bridge;
- a second dielectric layer having a first portion on the top surface of the interconnect bridge, and the second dielectric layer having a second portion over the first dielectric layer;
- a first via on the first bond pad, the first via in the second dielectric layer;
- a second via on the second bond pad, the second via in the second dielectric layer;
- a third bond pad on the first via, the third bond on the second dielectric layer;
- a fourth bond pad on the second via, the fourth bond on the second dielectric layer;
- and
- a solder resist layer on the third bond pad, the solder resist layer on the second dielectric layer, and the solder resist layer on the fourth bond pad;
- a first die coupled to the interconnect bridge, the first die also coupled to the third bond pad;
- and
- a second die coupled to interconnect bridge, the second die also coupled to the fourth bond pad.
11 more elements
A system, comprising:
- a display;
- and
- a device coupled to the display, the device, comprising:
- a silicon bridge over a trace layer of an organic substrate, the silicon bridge having a top surface, a bottom surface, a first side, and a second side opposite the first side;
- a first dielectric layer having a top surface and a bottom surface, the bottom surface on the trace layer, and the top surface below the top surface of the silicon bridge, the first dielectric layer having a first portion proximate the first side of the silicon bridge, and the first dielectric layer having a second portion proximate the second side of the silicon bridge;
- a first bond pad over the top surface of the first portion of the first dielectric layer, the first bond pad having a bottom surface above the bottom surface of the silicon bridge;
- a second bond pad over the top surface of the second portion of the first dielectric layer, the second bond pad having a bottom surface above the bottom surface of the silicon bridge;
- a second dielectric layer having a first portion on the top surface of the silicon bridge, and the second dielectric layer having a second portion over the first dielectric layer;
- a first via on the first bond pad, the first via in the second dielectric layer;
- a second via on the second bond pad, the second via in the second dielectric layer;
- a third bond pad on the first via, the third bond on the second dielectric layer;
- a fourth bond pad on the second via, the fourth bond on the second dielectric layer;
- and
- a solder resist layer on the third bond pad, the solder resist layer on the second dielectric layer, and the solder resist layer on the fourth bond pad;
- a first die coupled to the silicon bridge, the first die also coupled to the third bond pad;
- and
- a second die coupled to silicon bridge, the second die also coupled to the fourth bond pad.
14 more elements
A system, comprising:
- a display;
- and
- a device coupled to the display, the device, comprising:
- an interconnect bridge over a trace layer of an organic substrate, the interconnect bridge having a top surface, a bottom surface, a first side, and a second side opposite the first side;
- a first dielectric layer having a top surface and a bottom surface, the bottom surface on the trace layer, and the top surface below the top surface of the interconnect bridge, the first dielectric layer having a first portion proximate the first side of the interconnect bridge, and the first dielectric layer having a second portion proximate the second side of the interconnect bridge;
- a first bond pad over the top surface of the first portion of the first dielectric layer, the first bond pad having a bottom surface above the bottom surface of the interconnect bridge;
- a second bond pad over the top surface of the second portion of the first dielectric layer, the second bond pad having a bottom surface above the bottom surface of the interconnect bridge;
- a second dielectric layer having a first portion on the top surface of the interconnect bridge, and the second dielectric layer having a second portion over the first dielectric layer;
- a first via on the first bond pad, the first via in the second dielectric layer;
- a second via on the second bond pad, the second via in the second dielectric layer;
- a third bond pad on the first via, the third bond on the second dielectric layer;
- a fourth bond pad on the second via, the fourth bond on the second dielectric layer;
- and
- a solder resist layer on the third bond pad, the solder resist layer on the second dielectric layer, and the solder resist layer on the fourth bond pad;
- a first die coupled to the interconnect bridge, the first die also coupled to the third bond pad;
- and
- a second die coupled to interconnect bridge, the second die also coupled to the fourth bond pad.
14 more elements
Dependencies are inferred from the claim text.