Semiconductor module

A semiconductor module, comprising:

• an insulated circuit board including
• an insulating plate,
• a plurality of circuit pattern layers each disposed on a top surface of the insulating plate and each having a thickness in a range of 600 μm to 900 μm, and
• a heat dissipation plate disposed on a bottom surface of the insulating plate;
• a wide-gap semiconductor chip disposed on a top surface of one of the plurality of circuit pattern layers via a first bonding material and having a thickness in a range of 50 μm to 120 μm;
• and
• a conductive member including a first bonding part, a first bent part, a beam part extending continuously from the first bonding part via the first bent part, a second bent part and a second bonding part extending continuously from the beam part via the second bent part, wherein
• the first bonding part is connected to a top surface of the wide-gap semiconductor chip via a second bonding material, having a thickness in a range of 0.1 mm to 0.8 mm, and having an area in a range of 25% to 60% of an area of the top surface of the wide-gap semiconductor chip in a plan view of the semiconductor module, and
• the second bonding part is connected to a different one of the plurality of circuit pattern layers, adjacent to the one of the plurality of circuit pattern layers having the wide-gap semiconductor chip disposed thereon.