Thermal dissipation in semiconductor devices

A semiconductor structure, comprising:

• a first substrate having a frontside and a backside opposite the frontside;
• devices on the frontside;
• first interconnect structures on the frontside and coupled to the devices;
• second interconnect structures on the backside and coupled to the devices;
• a second substrate coupled to the backside such that the second interconnect structures are between the first substrate and the second substrate;
• and
• a via extending through the second substrate and coupled to the second interconnect structures.

A method, comprising:

• forming devices over a frontside of a first substrate;
• forming first interconnect structures coupled to the devices on the frontside of the first substrate;
• bonding a second substrate to the frontside of the first substrate such that the first interconnect structures are between the first substrate and the second substrate;
• forming second interconnect structures over a backside of the first substrate opposite the frontside, resulting in a semiconductor die;
• bonding a third substrate to the backside of the first substrate;
• and
• forming a plurality of vias coupled to the second interconnect structures and extending through the third substrate.