Method of manufacturing semiconductor device, method of manufacturing semiconductor module, and semiconductor device

A method of manufacturing a semiconductor module, the method comprising:

• (a) preparing a substrate having a chip mounting surface with a first bonding region and a second bonding region;
• (b) after (a), cleaning each of the first bonding region and the second bonding region;
• (c) after (b), supplying a homogenized die-bonding paste onto each of the first bonding region and the second bonding region;
• (d) after (c), attaching a first semiconductor chip on the first bonding region via the homogenized die-bonding paste supplied onto the first bonding region, the first semiconductor chip having a first front surface, a first back surface opposite the first front surface, and a first electrode formed on the first front surface;
• (e) after (d), attaching a second semiconductor chip on the second bonding region via the homogenized die-bonding paste supplied onto the second bonding region, the second semiconductor chip having a second front surface, a second back surface opposite the second front surface, and a second electrode formed on the second front surface;
• (f) after (e), curing the homogenized die-bonding paste supplied to each of the first bonding region and the second bonding region;
• (g) after (f), electrically connecting the first electrode of the first semiconductor chip with a first terminal of the substrate via a first wire, and electrically connecting the second electrode of the second semiconductor chip with a second terminal of the substrate via a second wire;
• and
• (h) after (g), sealing the first semiconductor chip, the second semiconductor chip, the first wire and the second wire with a sealing resin by compression molding,
• wherein the die-bonding paste used in (c) is initially provided as an unstirred die-bonding paste including a plurality of Ag fillers, and
• wherein, in (c), the homogenized die-bonding paste is supplied onto each of the first bonding region and the second bonding region after the unstirred die-bonding paste along with the plurality of Ag fillers is stirred for a first predetermined time period.

A semiconductor device comprising:

• a substrate;
• a semiconductor chip mounted on a chip mounting surface of the substrate via a homogenized die-bonding paste that is cured;
• a wire electrically connected a first electrode of the semiconductor chip with a terminal;
• and
• a sealing body sealing the semiconductor chip and the wire,
• wherein the homogenized die-bonding paste includes a plurality of Ag fillers and a plurality of AlN fillers,
• wherein a density of the plurality of AlN fillers per unit volume is less than a density of the plurality of Ag fillers per unit volume.