Power modules and panel-level methods of making the same

A semiconductor package for a power module, comprising:

• at least one high-side semiconductor die having a high-side active surface and a high-side inactive surface;
• at least one low-side semiconductor die having a low-side active surface and a low-side inactive surface;
• a plurality of vertical structures surrounding the at least one high-side semiconductor die and at least one low-side semiconductor die, wherein each of the vertical structure has a front surface aligned with the high-side active surface and low-side active surface and a back surface aligned with the high-side inactive surface and the low-side inactive surface;
• a molding layer encapsulating the at least one high-side semiconductor die and at least one low-side semiconductor die and the plurality of vertical structures;
• a front build-layer coupled to the at least one high-side semiconductor die at the high-side active surface, the at least one low-side semiconductor die at the low-side active surface, and the vertical structure at the front surface;
• a back build-up layer coupled to the at least one high-side semiconductor die at the high-side inactive surface, the at least one low-side semiconductor die at the low-side inactive surface, and the vertical structure at the back surface;
• and
• an external connection layer coupled to the back build-up layer.