Back to results
US 2025/0096180 A1Published application
Semiconductor device, wireless communication device, and method for fabricating semiconductor device
AssigneeFujitsu Limited
InventorsShirou Ozaki, Yasuhiro Nakasha, Naoya Okamoto, Yusuke Kumazaki, Naoki Hara, Toshihiro Ohki
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a semiconductor element; an interconnect layer provided on a first surface side of the semiconductor element, the interconnect layer including an interconnect connected to the semiconductor element and an insulating layer covering the interconnect; and a cavity provided between the first surface of the semiconductor element and the interconnect layer.
Claims15
A semiconductor device comprising:
- a semiconductor element;
- an interconnect layer provided on a first surface side of the semiconductor element, the interconnect layer including an interconnect connected to the semiconductor element and an insulating layer covering the interconnect;
- and
- a cavity provided between the first surface of the semiconductor element and the interconnect layer.
1 more element
A wireless communication device comprising:
- a semiconductor element;
- an interconnect layer provided on a first surface side of the semiconductor element, the interconnect layer including an interconnect connected to the semiconductor element and an insulating layer covering the interconnect;
- a cavity provided between the first surface of the semiconductor element and the interconnect layer;
- a circuit board provided opposite to the semiconductor element with respect to the interconnect layer, the circuit board being connected to the interconnect layer;
- and
- an antenna provided on the circuit board.
3 more elements
A method for fabricating a semiconductor device, the method comprising:
- forming a sacrificial film on a first surface of a semiconductor element;
- forming an interconnect layer on the sacrificial film, the interconnect layer including an interconnect connected to the semiconductor element and an insulating layer covering the interconnect;
- and
- removing the sacrificial film to form a cavity between the first surface of the semiconductor element and the interconnect layer.
1 more element
Dependencies are inferred from the claim text.